| PART |
Description |
Maker |
| MT6L58AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| 2SK3475 |
Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications
VHF-and UHF-band Amplifier Applications
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| 2N3375 2N33752N3632_2N3733 RF25 2N3733 SD1075 2N36 |
From old datasheet system
RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND
RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-60
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| 2N4440 SD1060 RF41 |
RF & MICROWAVE TRANSISTORS WIDEBAND VHF-UHF CLASS C Si, RF SMALL SIGNAL TRANSISTOR, TO-60
RF & MICROWAVE TRANSISTORS WIDEBAND VHF-UHF CLASS C
From old datasheet system
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 2SC4245 E000921 |
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS
From old datasheet system
TV TUNER, UHF MIXER APPLICATIONS VHF~UHF BAND RF AMPLIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| CMBT918 |
VHF/UHF TRANSISTOR
|
CDIL[Continental Device India Limited]
|
| KTC9011 |
RF/VHF/UHF Transistor
|
Korea Electronics (KEC)
|
| MS1261 |
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 15; P(in) (W): 1; Gain (dB): 12; Vcc (V): 12.5; Cob (pF): 45; fO (MHz): 0; Case Style: M122 UHF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
|
Microsemi, Corp.
Advanced Power Technology
|
| MMBTH10M3T5G |
NPN VHF/UHF Transistor
|
Rectron Semiconductor
|
| KTC3878S |
RF/VHF/UHF Transistor
EPITAXIAL PLANAR NPN TRANSISTOR
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| KTC319712 KTC3197 |
RF/VHF/UHF Transistor
EPITAXIAL PLANAR NPN TRANSISTOR
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
